aot210l/AOB210L 30v n-channel mosfet v ds i d (at v gs =10v) 105a r ds(on) (at v gs =10v) < 2.9m ? (< 2.6m ? ? ) r ds(on) (at v gs = 4.5v) < 3.7m ? (< 3.5m ? ? ) symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r jc 400 pulsed drain current c continuous drain current g parameter typ max t c =25c 1.9 88 t c =100c maximum junction-to-ambient a c/w r ja 12 54 15 v 20 gate-source voltage drain-source voltage 30 units junction and storage temperature range -55 to 175 c thermal characteristics the aot210l/AOB210L uses trench mosfet technology that is uniquely optimized to provide the most efficient high frequency switching performance. power losses are minimized due to an extremely low combination of r ds(on) and c rss . v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v avalanche energy l=0.1mh c mj avalanche current c 16 continuous drain current 231 20 a 68 a t a =25c i dsm a t a =70c i d 105 82 t c =25c t c =100c power dissipation b p d w power dissipation a p dsm w t a =70c 176 1.2 t a =25c maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.7 65 0.85 g d s www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1 1.7 2.2 v i d(on) 400 a 2.4 2.9 t j =125c 3.7 4.7 g fs 78 s v sd 0.65 1 v i s 105 a c iss 2800 3520 4300 pf c oss 920 1320 1720 pf c rss 50 90 120 pf r g 0.5 1 1.5 ? q g (10v) 39 48 58 nc q g (4.5v) 17 22 27 nc q gs 7 9 11 nc q gd 4 7 10 nc t d(on) 11 ns t r 10 ns t d(off) 38 ns t f 11 ns t rr 14 21 28 ns q rr 40 58 76 nc body diode reverse recovery charge i f =20a, di/dt=500a/ s maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =20v, r l =0.75 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge switching parameters v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance v ds =v gs i d =250 a v gs =10v, i d =20a to220 diode forward voltage v gs =10v, i d =20a to263 i s =1a,v gs =0v v ds =5v, i d =20a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v reverse transfer capacitance i f =20a, di/dt=500a/ s v gs =0v, v ds =15v, f=1mhz r ds(on) static drain-source on-resistance v gs =4.5v, i d =20a to220 v gs =4.5v, i d =20a to263 2.7 3.5 3 2.1 2.6 3.7 m ? a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user' s specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =175c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. www.freescale.net.cn 2/6 aot210l/AOB210L 30v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 20 40 60 80 100 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 2 4 6 8 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =20a v gs =10v i d =20a 0 2 4 6 8 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) 3.5v 3v 7v 10v vgs=2.5v www.freescale.net.cn 3/6 aot210l/AOB210L 30v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 2 4 6 8 10 0 1020304050 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c r ss v ds =20v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 1 00 s r jc =0.85c/w www.freescale.net.cn 4/6 aot210l/AOB210L 30v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 1 10 100 1000 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 40 80 120 160 200 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 30 60 90 120 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note f) current rating i d (a) t a =25c r ja =65c/w 10 100 1000 1 10 100 1000 time in avalanche, t a ( s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c www.freescale.net.cn 5/6 aot210l/AOB210L 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 aot210l/AOB210L 30v n-channel mosfet
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